Part Number Hot Search : 
MV5438 AAT1154 PQ5EV301 P3856 4361F MMBZ5228 M61511FP 103KT
Product Description
Full Text Search
 

To Download HVD148 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 HVD148
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0210-0100Z Rev.1.00 Apr.05.2004
Features
* * * * An optimal solution for antenna switching in mobile phones. Low capacitance.(C = 0.37 pF max) Low forward resistance. (rf = 2.5 max) Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD148 Laser Mark L2 Package Code SFP
Pin Arrangement
Cathode mark Mark 1
L2
2 1. Cathode 2. Anode
Rev.1.00, Apr.05.2004, page 1 of 4
HVD148
Absolute Maximum Ratings
(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 150 125 -55 to +125 Unit V mA mW C C
Electrical Characteristics
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min -- -- -- -- Typ -- -- -- -- Max 100 1.0 0.37 2.5 Unit nA V pF Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz
Notes: 1. Please do not use the soldering iron due to avoid high stress to the EFP package. 2. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
Rev.1.00, Apr.05.2004, page 2 of 4
HVD148
Main Characteristic
10-2 10-7 10-8 10
Forward current IF (A)
-4
10-6
Reverse current IR (A)
10-9 10-10 10-11 10-12 10-13
10-8
10-10
10-12
0
0.2
0.4
0.6
0.8
1.0
10-14
0
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 10 f = 1MHz
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 103 f = 100MHz
1.0
Forward resistance rf ()
102
Capacitance C (pF)
101
0.1
100
0.01 0.1
1.0
10
100
10-1 -4 10
10-3
10-2
10-1
Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage
Forward current IF (A) Fig.4 Forward resistance vs. Forward current
Rev.1.00, Apr.05.2004, page 3 of 4
HVD148
Package Dimensions
As of January, 2003
Unit: mm
1.0 0.10 1.4 0.10
0.13 0.05
0.5 - 0.55
0.3 0.05 0.6 0.05
Package Code JEDEC JEITA Mass (reference value)
SFP -- -- 0.0010 g
Rev.1.00, Apr.05.2004, page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0


▲Up To Search▲   

 
Price & Availability of HVD148

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X